China develops bismuth transistor, silicon-free chip technology, beats Intel with 40% more speed and 10% less energy
Chinese scientists have developed transistors using bismuth instead of traditional silicon, significantly improving speed and reducing energy consumption.
A research team from Peking University announced a breakthrough in chip technology that could reshape the semiconductor race, according to Interesting Engineering on March 11. Their study was published in Nature Materials.
The newly developed 2D transistors are reported to be 40% faster than Intel and TSMC’s latest 3nm silicon chips while consuming 10% less energy. Peking University described them as the fastest and most efficient transistors to date. Researchers believe this innovation could help China overcome challenges in silicon-based chip manufacturing.
According to an official statement from the university, "It is the fastest, most efficient transistor ever."
Transistor technology: A shift in the semiconductor race
Unlike traditional silicon transistors, which face limitations in miniaturization and energy efficiency, the new design addresses these constraints. According to physical chemistry professor Peng Hailin, head of the research team, U.S. sanctions have restricted China’s access to advanced silicon transistors, prompting Chinese scientists to explore alternative solutions.
Prof. Hailin compared their breakthrough to "changing lanes" in the semiconductor race, emphasizing its importance in overcoming silicon-based challenges.
"If chip innovations based on existing materials are considered a 'short cut,' then our development of 2D material-based transistors is akin to 'changing lanes,'" he explained.
Proprietary materials helped boost computing power, reduce energy use
In this study, researchers developed a gate-all-around field-effect transistor (GAAFET) using bismuth-based materials. This design marks a significant shift from fin field-effect transistors (FinFET), the industry standard since Intel commercialized them in 2011.
Unlike FinFET, which relies on "fins" for conductivity, GAAFET increases the contact area between the gate and the channel. The research team compared this transformation to replacing high-rise buildings with bridges, allowing electrons to flow more freely.
To further optimize performance, they used 2D semiconductor materials, which have uniform atomic thickness and higher mobility than silicon, making them viable candidates for next-generation chips. However, previous efforts to use 2D materials in transistors faced structural challenges that limited their effectiveness.
To overcome these obstacles, the Peking University team developed bismuth-based materials Bi₂O₂Se and Bi₂SeO₅, which act as both semiconductors and high-k dielectric oxides.
"Our proprietary materials allowed us to achieve thin, leak-free gate structures," said the research team.
This design significantly reduced switching voltage, boosted computing power, and minimized energy use and leakage due to the materials' high insulation.
The breakthrough chip is the result of nearly a decade of research by Peng and his team, who first discovered the Bi₂O₂Se/Bi₂SeO₅ material system almost 10 years ago.
Bismuth-based transistor outperforms leading competitors
The researchers fabricated prototype transistors using Peking University's high-precision processing platform. Results showed that the Bi₂O₂Se/Bi₂SeO₅ interface had fewer defects and allowed smoother electron flow compared to current oxide-semiconductor interfaces. The team is now working on scaling up production and has already created small logic units using this new transistor technology.
The new transistor has outperformed comparable devices from Intel, TSMC, Samsung, and the Belgian Interuniversity Microelectronics Centre. Notably, all tests were conducted under identical operating conditions to ensure fair performance comparisons.
As production scales and manufacturing is refined, the researchers expect performance to exceed that of silicon devices even further.
This breakthrough highlights the potential of 2D material-based transistors in revolutionizing chip technology.
A research team from Peking University announced a breakthrough in chip technology that could reshape the semiconductor race, according to Interesting Engineering on March 11. Their study was published in Nature Materials.
The newly developed 2D transistors are reported to be 40% faster than Intel and TSMC’s latest 3nm silicon chips while consuming 10% less energy. Peking University described them as the fastest and most efficient transistors to date. Researchers believe this innovation could help China overcome challenges in silicon-based chip manufacturing.
According to an official statement from the university, "It is the fastest, most efficient transistor ever."
Transistor technology: A shift in the semiconductor race
Unlike traditional silicon transistors, which face limitations in miniaturization and energy efficiency, the new design addresses these constraints. According to physical chemistry professor Peng Hailin, head of the research team, U.S. sanctions have restricted China’s access to advanced silicon transistors, prompting Chinese scientists to explore alternative solutions.
Prof. Hailin compared their breakthrough to "changing lanes" in the semiconductor race, emphasizing its importance in overcoming silicon-based challenges.
"If chip innovations based on existing materials are considered a 'short cut,' then our development of 2D material-based transistors is akin to 'changing lanes,'" he explained.
Proprietary materials helped boost computing power, reduce energy use
In this study, researchers developed a gate-all-around field-effect transistor (GAAFET) using bismuth-based materials. This design marks a significant shift from fin field-effect transistors (FinFET), the industry standard since Intel commercialized them in 2011.
Unlike FinFET, which relies on "fins" for conductivity, GAAFET increases the contact area between the gate and the channel. The research team compared this transformation to replacing high-rise buildings with bridges, allowing electrons to flow more freely.
To further optimize performance, they used 2D semiconductor materials, which have uniform atomic thickness and higher mobility than silicon, making them viable candidates for next-generation chips. However, previous efforts to use 2D materials in transistors faced structural challenges that limited their effectiveness.
To overcome these obstacles, the Peking University team developed bismuth-based materials Bi₂O₂Se and Bi₂SeO₅, which act as both semiconductors and high-k dielectric oxides.
"Our proprietary materials allowed us to achieve thin, leak-free gate structures," said the research team.
This design significantly reduced switching voltage, boosted computing power, and minimized energy use and leakage due to the materials' high insulation.
The breakthrough chip is the result of nearly a decade of research by Peng and his team, who first discovered the Bi₂O₂Se/Bi₂SeO₅ material system almost 10 years ago.
Bismuth-based transistor outperforms leading competitors
The researchers fabricated prototype transistors using Peking University's high-precision processing platform. Results showed that the Bi₂O₂Se/Bi₂SeO₅ interface had fewer defects and allowed smoother electron flow compared to current oxide-semiconductor interfaces. The team is now working on scaling up production and has already created small logic units using this new transistor technology.
The new transistor has outperformed comparable devices from Intel, TSMC, Samsung, and the Belgian Interuniversity Microelectronics Centre. Notably, all tests were conducted under identical operating conditions to ensure fair performance comparisons.
As production scales and manufacturing is refined, the researchers expect performance to exceed that of silicon devices even further.
This breakthrough highlights the potential of 2D material-based transistors in revolutionizing chip technology.
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